US PATENT SUBCLASS 438 / FOR 269
.~.~.~ Polycrystalline layers (437/109)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 268  DF  .~.~ Growing single layer in multi-steps (437/108) {4}
FOR 269.~.~.~ Polycrystalline layers (437/109)

DEFINITION

Classification: 438/FOR.269

Polycrystalline layers:

Foreign art collection for processes for growing plural layers having monolithic matter containing multiple crystals.