US PATENT SUBCLASS 438 / FOR 117
.~.~ With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 117.~.~ With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)

DEFINITION

Classification: 438/FOR.117

With treatment by high energy radiation or plasma (e.g., ion beam, etc.):

Foreign art collection for processes wherein a substrate is subjected to bombardment by high energy radiation above that of the so-called ultraviolet range or is subjected to a plasma.