US PATENT SUBCLASS 438 / FOR 207
.~.~.~ Integrating active with passive devices (437/47)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 207.~.~.~ Integrating active with passive devices (437/47)

DEFINITION

Classification: 438/FOR.207

Integrating active with passive device:

Foreign art collection for processes for combing active device e.g, FET, Transistor, etc. with passive devices, e.g., resistor, capacitor, etc.