US PATENT SUBCLASS 438 / FOR 281
.~.~.~ Controlling volume or thickness of growth (437/121)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 279  DF  .~.~ Sliding liquid phase epitaxy (437/119) {5}
FOR 281.~.~.~ Controlling volume or thickness of growth (437/121)

DEFINITION

Classification: 438/FOR.281

Controlling volume or thickness of growth:

Foreign art collection for processes having the step of regulating the volume of the material deposited or the thickness of the deposited layer.