US PATENT SUBCLASS 438 / FOR 174
.~.~.~.~ Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 173  DF  .~.~.~ Involving Schottky contact formation (437/39) {12}
FOR 174.~.~.~.~ Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)

DEFINITION

Classification: 438/FOR.174

Forming pair of device regions separated by gate structure, i.e., FET:

Foreign art collection for processes for forming two regions, e.g., source and regions, etc. on a device separated by a gate composed of thin insulator and an electron (gate) layer formed thereon in such a manner that conductance between the device regions (channel regions) is modulated by varying the gate voltage, i.e., FET.