US PATENT SUBCLASS 438 / FOR 168
.~.~.~.~ Forming complementary MOS (metal oxide semiconductor) (437/34)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 161  DF  .~.~.~ Including multiple implantations of same region (437/27) {4}
FOR 168.~.~.~.~ Forming complementary MOS (metal oxide semiconductor) (437/34)

DEFINITION

Classification: 438/FOR.168

Forming complementary MOS (metal oxide semiconductor):

Foreign art collection for processes for forming complementary metal oxide semiconductor device, e.g., forming source and drain regions in the implanted well-region, etc.