US Patent Class 216
ETCHING A SUBSTRATE: PROCESSES



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Current as of: June, 1999
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  DF  CLASS NOTES
2  DF  ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION
3  DF  FORMING OR TREATING JOSEPHSON JUNCTION ARTICLE
4  DF  FORMING OR TREATING A SIGN OR MATERIAL USEFUL IN A SIGN
5  DF  .~ Sign or material is electroluminescent
6  DF  FORMING OR TREATING MATERIAL USEFUL IN A CAPACITOR
7  DF  FORMING OR TREATING FIBROUS ARTICLE OR FIBER REINFORCED COMPOSITE STRUCTURE
8  DF  FORMING OR TREATING CYLINDRICAL OR TUBULAR ARTICLE HAVING PATTERN OR DESIGN ON ITS SURFACE
9  DF  .~ Forming or treating an embossing cylinder or tubular article
10  DF  .~ Forming or treating liquid transfer cylinder or tubular article (e.g., printing roll, etc.)
11  DF  FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION
12  DF  FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.)
13  DF  FORMING OR TREATING ELECTRICAL CONDUCTOR ARTICLE (E.G., CIRCUIT, ETC.)
14  DF  .~ Forming or treating lead frame or beam lead
15  DF  .~ Forming or treating a crossover
16  DF  .~ Forming or treating resistive material
17  DF  .~ Forming or treating of groove or through hole
18  DF  .~.~ Filling or coating of groove or through hole with a conductor to form an electrical interconnection
19  DF  .~.~ Filling or coating of groove or through hole in a conductor with an insulator
20  DF  .~ Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.)
21  DF  .~ Repairing circuit
22  DF  FORMING OR TREATING ARTICLE CONTAINING MAGNETICALLY RESPONSIVE MATERIAL
23  DF  FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL
24  DF  FORMING OR TREATING OPTICAL ARTICLE
25  DF  .~ Phosphor screen
26  DF  .~ Lens
27  DF  FORMING OR TREATING THERMAL INK JET ARTICLE (E.G., PRINT HEAD, LIQUID JET RECORDING HEAD, ETC.)
28  DF  FORMING OR TREATING AN ORNAMENTED ARTICLE
29  DF  .~ Wood surface treated or wood grain produced
30  DF  .~ Treating stone (e.g., marble, etc.)
31  DF  .~ Treating glass (e.g., mirror, etc.)
32  DF  .~ Treating elemental metal or alloy thereof
33  DF  ADHESIVE OR AUTOGENOUS BONDING OF TWO OR MORE SELF-SUSTAINING PREFORMS WHEREIN AT LEAST TWO OF THE PREFORMS ARE NOT INTENDED TO BE REMOVED (E.G., PREFABRICATED BASE, ETC.)
34  DF  .~ Etching improves or promotes adherence of preforms being bonded
35  DF  .~.~ Bonding of preform of metal or an alloy thereof to a preform of a nonmetal
36  DF  .~ Removing at least one of the self-sustaining preforms or a portion thereof
37  DF  ETCHING AND COATING OCCUR IN THE SAME PROCESSING CHAMBER
38  DF  PLANARIZING A NONPLANAR SURFACE
39  DF  FORMING GROOVE OR HOLE IN A SUBSTRATE WHICH IS SUBSEQUENTLY FILLED OR COATED
40  DF  FORMING PATTERN USING LIFT OFF TECHNIQUE
41  DF  MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)
42  DF  .~ Resist material applied in particulate form or spray
43  DF  .~ Adhesively bonding resist to substrate
44  DF  .~ Mechanically forming pattern into a resist
45  DF  .~ Mask is reusable (i.e., stencil)
46  DF  .~ Masking of sidewall
47  DF  .~ Mask is multilayer resist
48  DF  .~ Mask is exposed to nonimaging radiation
49  DF  .~ Mask resist contains organic compound
50  DF  .~.~ Mask resist contains a color imparting agent
51  DF  .~ Mask resist contains inorganic material
52  DF  MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE
53  DF  .~ Nongaseous phase etching
54  DF  PATTERN OR DESIGN APPLIED BY TRANSFER
55  DF  HEATING OR BAKING OF SUBSTRATE PRIOR TO ETCHING TO CHANGE THE CHEMICAL PROPERTIES OF SUBSTRATE TOWARD THE ETCHANT
56  DF  ETCHING TO PRODUCE POROUS OR PERFORATED ARTICLE
57  DF  GAS PHASE AND NONGASEOUS PHASE ETCHING ON THE SAME SUBSTRATE
58  DF  GAS PHASE ETCHING OF SUBSTRATE
59  DF  .~ With measuring, testing, or inspecting
60  DF  .~.~ By optical means or of an optical property
61  DF  .~.~ By electrical means or of an electrical property
62  DF  .~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant
63  DF  .~ Application of energy to the gaseous etchant or to the substrate being etched
64  DF  .~.~ Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.)
65  DF  .~.~ Using laser
66  DF  .~.~ Using ion beam, ultraviolet, or visible light
67  DF  .~.~ Using plasma
68  DF  .~.~.~ Using coil to generate the plasma
69  DF  .~.~.~ Using microwave to generate the plasma
70  DF  .~.~.~.~ Magnetically enhancing the plasma
71  DF  .~.~.~ Specific configuration of electrodes to generate the plasma
72  DF  .~ Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate
73  DF  .~ Etching vapor produced by evaporation, boiling, or sublimation
74  DF  .~ Etching inorganic substrate
75  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound
76  DF  .~.~.~ Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom
77  DF  .~.~.~ Etching of substrate containing elemental aluminum, or an alloy or compound thereof
78  DF  .~.~.~ Etching of substrate containing elemental copper, or an alloy or compound thereof
79  DF  .~.~ Etching silicon containing substrate
80  DF  .~.~.~ Silicon containing substrate is glass
81  DF  .~.~ Etching elemental carbon containing substrate
83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE
84  DF  .~ With measuring, testing, or inspecting
85  DF  .~.~ By optical means or of an optical property
86  DF  .~.~ By electrical means or of an electrical property
87  DF  .~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant
88  DF  .~ Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)
89  DF  .~.~ Etchant contains solid particle (e.g., abrasive for polishing, etc.)
90  DF  .~ Relative movement between the substrate and a confined pool of etchant
91  DF  .~.~ Rotating, repeated dipping, or advancing movement of substrate
92  DF  .~ Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate
93  DF  .~ Recycling, regenerating, or rejunevating etchant
94  DF  .~ Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.)
95  DF  .~ Substrate is multilayered
96  DF  .~ Etching inorganic substrate
97  DF  .~.~ Substrate is glass
98  DF  .~.~.~ Frosting glass
99  DF  .~.~ Substrate contains silicon or silicon compound
100  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound
101  DF  .~.~.~ Etching of a compound containing at least one oxygen atom and at least one metal atom
102  DF  .~.~.~ Metal is elemental aluminum, an alloy, or compound thereof
103  DF  .~.~.~.~ Etchant contains acid
104  DF  .~.~.~.~.~ Etchant contains fluoride ion
105  DF  .~.~.~ Metal is elemental copper, an alloy, or compound thereof
106  DF  .~.~.~.~ Etchant contains acid
107  DF  .~.~.~.~.~ Etchant contains fluoride ion
108  DF  .~.~.~ Etchant contains acid
109  DF  .~.~.~.~ Etchant contains fluoride ion