| 216 / | HD | ETCHING A SUBSTRATE: PROCESSES |
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| 58 | DF | GAS PHASE ETCHING OF SUBSTRATE {6} |
| 74 | DF | .~ Etching inorganic substrate {3} |
| 75 |  | .~.~ Substrate contains elemental metal, alloy thereof, or metal compound {3} |
| 76 | DF | .~.~.~> Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom |
| 77 | DF | .~.~.~> Etching of substrate containing elemental aluminum, or an alloy or compound thereof |
| 78 | DF | .~.~.~> Etching of substrate containing elemental copper, or an alloy or compound thereof |