US PATENT SUBCLASS 216 / 77
.~.~.~ Etching of substrate containing elemental aluminum, or an alloy or compound thereof

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
74  DF  .~ Etching inorganic substrate {3}
75  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound {3}
77.~.~.~ Etching of substrate containing elemental aluminum, or an alloy or compound thereof

DEFINITION

Classification: 216/77

Etching of substrate containing elemental aluminum, or an alloy or compound thereof:

(under subclass 75) Process wherein the material to be etched contains elemental aluminum or an alloy thereof, or a compound containing aluminum.