US PATENT SUBCLASS 216 / 74
.~ Etching inorganic substrate

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
74.~ Etching inorganic substrate {3}
75  DF  .~.~> Substrate contains elemental metal, alloy thereof, or metal compound {3}
79  DF  .~.~> Etching silicon containing substrate {1}
81  DF  .~.~> Etching elemental carbon containing substrate

DEFINITION

Classification: 216/74

Etching inorganic substrate:

(under subclass 58) Process wherein the etching step is performed on an inorganic substrate and may include elemental material.

(1) Note. See Glossary for what is meant by the term Inorganic.