US PATENT SUBCLASS 216 / 79
.~.~ Etching silicon containing substrate

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
74  DF  .~ Etching inorganic substrate {3}
79.~.~ Etching silicon containing substrate {1}
80  DF  .~.~.~> Silicon containing substrate is glass

DEFINITION

Classification: 216/79

Etching silicon containing substrate:

(under subclass 74) Process wherein the material to be etched contains silicon in either elemental or combined form.

SEE OR SEARCH THIS CLASS, SUBCLASS:

97+, for nongaseous phase etching of glass.

99, for nongaseous phase etching of a silicon containing substrate.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, for (a) combined processes and (b) unit operation not elsewhere provided for manufacturing a semiconductive electrical substrate or device.