US PATENT SUBCLASS 216 / 58
GAS PHASE ETCHING OF SUBSTRATE

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58GAS PHASE ETCHING OF SUBSTRATE {6}
59  DF  .~> With measuring, testing, or inspecting {2}
62  DF  .~> Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant
63  DF  .~> Application of energy to the gaseous etchant or to the substrate being etched {4}
72  DF  .~> Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate
73  DF  .~> Etching vapor produced by evaporation, boiling, or sublimation
74  DF  .~> Etching inorganic substrate {3}

DEFINITION

Classification: 216/58

GAS PHASE ETCHING OF SUBSTRATE:

(under the class definition) Process wherein the etchant is

in a gaseous state when it contacts the substrate.

(1) Note. See Glossary for a definition of the term Gas.

(2) Note. This and indented subclasses include etching employing ionized gas with approximately equal numbers of positive ions and electrons so the mixture is highly conductive and affected by magnetic fields, i.e., plasma.