US PATENT SUBCLASS 216 / 72
.~ Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate

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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
72.~ Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate

DEFINITION

Classification: 216/72

Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate:

(under subclass 58) Process involving the etching of a multilayered substrate, using a single etching step, where the process parameters used causes a difference of the etching rate or characteristic in at least two different layers of the substrate.