US PATENT SUBCLASS 216 / 62 .~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant
Current as of: June, 1999
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.~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant
DEFINITION
Classification: 216/62
Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant:
(under subclass 58) Process wherein a substrate is altered by contacting prior to etching with a material or irradiation which (a) forms an alloy, (b) diffuses into, or (c) chemically reacts with the substrate, or causes a chemical reaction within the substrate to alter the effect of the etchant on the substrate or any part thereof.
SEE OR SEARCH THIS CLASS, SUBCLASS:
87, for altering of the etchability of a substrate before nongaseous phase etching by treatment with high energy radiation, alloying, diffusing, or chemically reacting.
SEE OR SEARCH CLASS
438, Semiconductor Device Manufacturing: Process,
705, for processes of altering the etchability of a semiconductor substrate prior to chemical etching for manufacturing a semiconductive electrical substrate or device; see the search notes thereunder.