US PATENT SUBCLASS 216 / 62
.~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant


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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
62.~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant


DEFINITION

Classification: 216/62

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant:

(under subclass 58) Process wherein a substrate is altered by contacting prior to etching with a material or irradiation which (a) forms an alloy, (b) diffuses into, or (c) chemically reacts with the substrate, or causes a chemical reaction within the substrate to alter the effect of the etchant on the substrate or any part thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

87, for altering of the etchability of a substrate before nongaseous phase etching by treatment with high energy radiation, alloying, diffusing, or chemically reacting.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process,

705, for processes of altering the etchability of a semiconductor substrate prior to chemical etching for manufacturing a semiconductive electrical substrate or device; see the search notes thereunder.