US PATENT SUBCLASS 216 / 63
.~ Application of energy to the gaseous etchant or to the substrate being etched

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
63.~ Application of energy to the gaseous etchant or to the substrate being etched {4}
64  DF  .~.~> Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.)
65  DF  .~.~> Using laser
66  DF  .~.~> Using ion beam, ultraviolet, or visible light
67  DF  .~.~> Using plasma {3}

DEFINITION

Classification: 216/63

Application of energy to the gaseous etchant or to the substrate being etched:

(under subclass 58) Process directed to the application of energy to the gaseous etchant or to the substrate being etched, e.g., Ultrasonic substrate heating, radiation, plasma, ion beam, etc.

SEE OR SEARCH THIS CLASS, SUBCLASS:

73, for preparing etching vapor by evaporation, boiling, or sublimation.

87, altering of the etchability of a substrate prior to nongaseous phase etching by the use irradiation, ion implantation, alloying, diffusing, or chemically reacting.

94, for nongaseous phase etching using high energy irradiation, e.g., laser, e-beam, or ion beam, etc.