US PATENT SUBCLASS 216 / 64
.~.~ Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.)

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
63  DF  .~ Application of energy to the gaseous etchant or to the substrate being etched {4}
64.~.~ Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.)

DEFINITION

Classification: 216/64

Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.):

(under subclass 58) Process wherein the etchant is devoid of a compound containing at least one chlorine and/or fluorine atom and at least one carbon atom.

(1) Note. This subclass requires that all of of the etching materials recited be devoid of the a chlorocarbon or flurocarbon carbon (etching mixtures). Also excluded are multistep processes wherein one of etching steps uses a chlorocarbon or fluorocarbon compound. See appropriate subclasses below for etching processes using etchants excluded from this subclass.