US PATENT SUBCLASS 216 / 67
.~.~ Using plasma

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
63  DF  .~ Application of energy to the gaseous etchant or to the substrate being etched {4}
67.~.~ Using plasma {3}
68  DF  .~.~.~> Using coil to generate the plasma
69  DF  .~.~.~> Using microwave to generate the plasma {1}
71  DF  .~.~.~> Specific configuration of electrodes to generate the plasma

DEFINITION

Classification: 216/67

Using plasma:

(under subclass 63) Process wherein the energy source is a plasma.

(1) Note. See Glossary for a definition of the term Plasma.