US PATENT SUBCLASS 216 / 71
.~.~.~ Specific configuration of electrodes to generate the plasma

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
63  DF  .~ Application of energy to the gaseous etchant or to the substrate being etched {4}
67  DF  .~.~ Using plasma {3}
71.~.~.~ Specific configuration of electrodes to generate the plasma

DEFINITION

Classification: 216/71

Specific configuration of electrodes to generate the plasma:

(under subclass 67) Process wherein the plasma is produced using electrodes which are in a specific enumerated configuration in relation to each other.