US PATENT SUBCLASS 216 / 81
.~.~ Etching elemental carbon containing substrate

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
74  DF  .~ Etching inorganic substrate {3}
81.~.~ Etching elemental carbon containing substrate

DEFINITION

Classification: 216/81

Etching elemental carbon containing substrate:

(under subclass 74) Process wherein the material to be etched contains elemental carbon in any of its allotropic forms, e.g., diamond, etc.