US PATENT SUBCLASS 216 / 40
FORMING PATTERN USING LIFT OFF TECHNIQUE


Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

40FORMING PATTERN USING LIFT OFF TECHNIQUE


DEFINITION

Classification: 216/40

FORMING PATTERN USING LIFT OFF TECHNIQUE:

(under the class definition) Process directed to placing a mask on a substrate, coating, or depositing material over the mask and substrate, then removing the mask to remove the deposited layer on the mask, thus leaving the deposited layer in a pattern where the mask was not present, and etching using the pattern as a mask.

(1) Note. Any means of removal may be used to include dissolution.