US PATENT SUBCLASS 216 / 48
.~ Mask is exposed to nonimaging radiation


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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

41  DF  MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST) {9}
48.~ Mask is exposed to nonimaging radiation


DEFINITION

Classification: 216/48

Mask is exposed to nonimaging radiation:

(under subclass 41) Process of exposing the etch resist to nonimaging radiation, e.g., U.V. light, laser beam, etc.

SEE OR SEARCH THIS CLASS, SUBCLASS:

62, for altering of the etchability of a substrate by irradiation, ion implantation, alloying, diffusing, or chemically reacting the substrate during gas phase etching.

63+, for gas phase etching with application of energy to the substrate being etched, e.g., ultrasonic, substrate heating, radiation, plasma, ion beam, etc.

87, for altering of the etchability of a substrate during liquid phase etching by treatment with high energy radiation,

alloying, diffusion, or chemically reacting.

94, for liquid phase etching with high energy irradiation, e.g., laser, e-beam, or ion beam, etc.

SEE OR SEARCH CLASS 430, Radiation Imagery Chemistry: Process, Composition, or Product Thereof, for the production of an image formed by use of radiation or light combined with etching.