US PATENT SUBCLASS 216 / 41
MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST)

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

41MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST) {9}
42  DF  .~> Resist material applied in particulate form or spray
43  DF  .~> Adhesively bonding resist to substrate
44  DF  .~> Mechanically forming pattern into a resist
45  DF  .~> Mask is reusable (i.e., stencil)
46  DF  .~> Masking of sidewall
47  DF  .~> Mask is multilayer resist
48  DF  .~> Mask is exposed to nonimaging radiation
49  DF  .~> Mask resist contains organic compound {1}
51  DF  .~> Mask resist contains inorganic material

DEFINITION

Classification: 216/41

MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST):

(under the class definition) Process directed to using a patterned material which is resistant to the etchant.

(1) Note. This subclass rather than subclass 49 and subclass 51 specifically provides for etch resistant material where the disclosure of the patent is silent as to whether the material is organic or inorganic in nature.

SEE OR SEARCH THIS CLASS, SUBCLASS:

56, for making a porous or perforated article having a nonmasking function.

SEE OR SEARCH CLASS

430, Radiation Imagery Chemistry: Process, Composition, or Product Thereof,

5, for a radiation mask.