US PATENT SUBCLASS 216 / 96
.~ Etching inorganic substrate

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
96.~ Etching inorganic substrate {3}
97  DF  .~.~> Substrate is glass {1}
99  DF  .~.~> Substrate contains silicon or silicon compound
100  DF  .~.~> Substrate contains elemental metal, alloy thereof, or metal compound {4}

DEFINITION

Classification: 216/96

Etching inorganic substrate:

(under subclass 83) Process wherein at least one of layers of the substrate contains inorganic material.

(1) Note. See Glossary for a definition of the term Inorganic.