US PATENT SUBCLASS 216 / 83
NONGASEOUS PHASE ETCHING OF SUBSTRATE

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
84  DF  .~> With measuring, testing, or inspecting {2}
87  DF  .~> Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant
88  DF  .~> Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) {1}
90  DF  .~> Relative movement between the substrate and a confined pool of etchant {1}
92  DF  .~> Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate
93  DF  .~> Recycling, regenerating, or rejunevating etchant
94  DF  .~> Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.)
95  DF  .~> Substrate is multilayered
96  DF  .~> Etching inorganic substrate {3}

DEFINITION

Classification: 216/83

NONGASEOUS PHASE ETCHING OF SUBSTRATE:

(under the class definition) Process the ... wherein the etchant used is employed in a nongaseous phase:

(1) Note. Most of the patents found in this subclass involve liquid phase etching processes. See Glossary for a definition of the term Liquid.