US PATENT SUBCLASS 216 / 88
.~ Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
88.~ Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) {1}
89  DF  .~.~> Etchant contains solid particle (e.g., abrasive for polishing, etc.)

DEFINITION

Classification: 216/88

Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.):

(under subclass 83) Process in which the etching occurs at the interface at a film between the substrate and a conforming surface with relative motion between the substrate and the conforming surface.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process,

691+, for chemical-mechanical polishing processes for manufacturing a semiconductive electrical substrate or device.