US PATENT SUBCLASS 216 / 87
.~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
87.~ Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant

DEFINITION

Classification: 216/87

Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant:

(under subclass 83) Process wherein a substrate is altered by contacting prior to etching with a material or irradiation which (a) forms an alloy, (b) diffuses into, or (c) chemically reacts with the substrate, or causes a chemical reaction within the substrate to alter the effect of the etchant on the substrate or any part thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

94, nongaseous phase etching using high energy irradiation, e.g., laser, electron-beam, ion beam, etc., where the substrate is not modified by irradiation prior to etching.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process,

705, for processes of altering the etchability of a semiconductor substrate prior the chemical etching for manufacturing a semiconductive electrical substrate or device; see the search notes thereunder.