US PATENT SUBCLASS 216 / 109
.~.~.~.~ Etchant contains fluoride ion

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
96  DF  .~ Etching inorganic substrate {3}
100  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound {4}
108  DF  .~.~.~ Etchant contains acid {1}
109.~.~.~.~ Etchant contains fluoride ion

DEFINITION

Classification: 216/109

Etchant contains fluoride ion:

(under subclass 108) Process wherein the etchant contains fluoride ion.