US PATENT SUBCLASS 216 / 91
.~.~ Rotating, repeated dipping, or advancing movement of substrate

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
90  DF  .~ Relative movement between the substrate and a confined pool of etchant {1}
91.~.~ Rotating, repeated dipping, or advancing movement of substrate

DEFINITION

Classification: 216/91

Rotating, repeated dipping, or advancing movement of substrate:

(under subclass 90) Process wherein the substrate is (a) rotated with respect to the pool of etchant, (b) repeatedly dipped into and removed from the same pool of etchant, or (c) moved through a pool of etchant.