US PATENT SUBCLASS 216 / 101
.~.~.~ Etching of a compound containing at least one oxygen atom and at least one metal atom

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
96  DF  .~ Etching inorganic substrate {3}
100  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound {4}
101.~.~.~ Etching of a compound containing at least one oxygen atom and at least one metal atom

DEFINITION

Classification: 216/101

Etching of a compound containing at least one oxygen atom and at least one metal atom:

(under subclass 100) Process wherein the substrate etched contains a compound having at least one metal atom and at least one oxygen atom, e.g., indium titanium oxide (I.T.O.), a ceramic oxide, etc.

(1) Note. The substrate may also contain other elements.