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| DF | CLASS NOTES | |
| 1 | DF | SPECIFIC SIGNAL DISCRIMINATING (E.G., COMPARING, SELECTING, ETC.) WITHOUT SUBSEQUENT CONTROL |
| 2 | DF | .~ By phase |
| 3 | DF | .~.~ Comparison between plural inputs (e.g., phase angle indication, lead-lag discriminator, etc.) |
| 4 | DF | .~.~.~ With transducer |
| 5 | DF | .~.~.~ With input derived from feedback |
| 6 | DF | .~.~.~ With electron space discharge |
| 7 | DF | .~.~.~ With reference signal |
| 8 | DF | .~.~.~.~ With varying frequency |
| 9 | DF | .~.~.~.~ With sampling |
| 10 | DF | .~.~.~.~ Uniform pulse waveform |
| 11 | DF | .~.~.~.~ With transformer |
| 12 | DF | .~.~.~ With logic or bistable circuit |
| 13 | DF | .~ By shape |
| 14 | DF | .~.~ Slope |
| 15 | DF | .~.~.~ With direction (i.e., positive or negative) |
| 16 | DF | .~.~ Having feedback |
| 17 | DF | .~.~ With reference signal |
| 18 | DF | .~ By presence or absence pulse detection |
| 19 | DF | .~.~ Arbitration |
| 20 | DF | .~.~ Monitoring (e.g., failure detection, etc.) |
| 21 | DF | .~.~ With variable frequency source |
| 22 | DF | .~ By pulse noncoincidence |
| 23 | DF | .~ By pulse coincidence |
| 24 | DF | .~.~ Edge sensing |
| 25 | DF | .~.~ With uniform spacing |
| 26 | DF | .~.~ With pulse width detecting |
| 27 | DF | .~.~ With reference |
| 28 | DF | .~ By polarity |
| 29 | DF | .~.~ Selection of a particular polarity |
| 30 | DF | .~.~ Opposite polarity |
| 31 | DF | .~ By pulse width or spacing |
| 32 | DF | .~.~ With shock-excited circuit |
| 33 | DF | .~.~ With sampling |
| 34 | DF | .~.~ Narrow pulse elimination or suppression |
| 35 | DF | .~.~ Separating by duration or gap (e.g., duty cycle, etc.) |
| 36 | DF | .~.~ Selection of a particular pulse width |
| 37 | DF | .~.~ Comparison by threshold or reference |
| 38 | DF | .~.~ With plural paths |
| 39 | DF | .~ By frequency |
| 40 | DF | .~.~ Comparison between plural inputs |
| 41 | DF | .~.~.~ With synchronous detection |
| 42 | DF | .~.~.~ Fixed frequency reference signal |
| 43 | DF | .~.~.~ With logic or bistable circuit |
| 44 | DF | .~.~ With predetermined frequency selection |
| 45 | DF | .~.~.~ Including sampling or reference frequency |
| 46 | DF | .~.~.~ Including plural frequency detection |
| 47 | DF | .~.~ Frequency detection |
| 48 | DF | .~.~.~ With counting |
| 49 | DF | .~.~.~ With logic or bistable circuit |
| 50 | DF | .~ By amplitude |
| 51 | DF | .~.~ With sensing amplifier |
| 52 | DF | .~.~.~ Differential amplifier |
| 53 | DF | .~.~.~.~ Current mirror |
| 54 | DF | .~.~.~.~ Having feedback |
| 55 | DF | .~.~.~.~.~ Cross-coupled |
| 56 | DF | .~.~.~.~ With reference signal |
| 57 | DF | .~.~.~ With latching type element (e.g., flip-flop, etc.) |
| 58 | DF | .~.~ Maximum or minimum amplitude |
| 59 | DF | .~.~.~ Employing input compared to output |
| 60 | DF | .~.~.~ Employing input compared to reference derived therefrom |
| 61 | DF | .~.~.~ By diode-capacitor network |
| 62 | DF | .~.~.~ Maximum and minimum amplitude |
| 63 | DF | .~.~ Comparison between plural varying inputs |
| 64 | DF | .~.~.~ With logic or bistable circuit |
| 65 | DF | .~.~.~ Differential input |
| 66 | DF | .~.~.~.~ Current mirror |
| 67 | DF | .~.~.~.~ Having feedback |
| 68 | DF | .~.~.~ Input provides varying reference signal |
| 69 | DF | .~.~.~ With plural paths |
| 70 | DF | .~.~.~.~ With single output |
| 71 | DF | .~.~.~ Three or more inputs |
| 72 | DF | .~.~ Input signal compared to reference derived therefrom |
| 73 | DF | .~.~.~ Reference derived by feedback |
| 74 | DF | .~.~ Input signal compared to plural fixed references |
| 75 | DF | .~.~.~ Three or more |
| 76 | DF | .~.~.~ With logic or bistable circuit |
| 77 | DF | .~.~ Input signal compared to single fixed reference |
| 78 | DF | .~.~.~ Reference level crossover detecting |
| 79 | DF | .~.~.~.~ Zero crossover |
| 80 | DF | .~.~.~ Reference determined by threshold of single circuit element |
| 81 | DF | .~.~.~.~ With transistor |
| 82 | DF | .~.~.~ Plural sources of input signal |
| 83 | DF | .~.~.~ Temperature compensation |
| 84 | DF | .~.~.~ With bridge circuit |
| 85 | DF | .~.~.~ Inverting input or output |
| 86 | DF | .~.~.~ With transformer |
| 87 | DF | .~.~.~ Having feedback |
| 88 | DF | .~.~.~ With source as reference |
| 89 | DF | .~.~.~ With differential amplifier |
| 90 | DF | .~.~ Comparison between two characteristics of an input signal |
| 91 | DF | .~.~ Including details of sampling or holding |
| 92 | DF | .~.~.~ With bridge circuit |
| 93 | DF | .~.~.~ With reference source |
| 94 | DF | .~.~.~ Sample and hold |
| 95 | DF | .~.~.~.~ Having feedback |
| 96 | DF | .~.~.~.~ With differential amplifier |
| 97 | DF | .~.~ With logic or bistable circuit |
| 98 | DF | .~ By separating composite signal |
| 99 | DF | .~ Having selection between plural continuous waveforms |
| 100 | DF | SIGNAL CONVERTING, SHAPING, OR GENERATING |
| 101 | DF | .~ Converting input current or voltage to output frequency |
| 102 | DF | .~ Converting input frequency to output current or voltage |
| 103 | DF | .~ Converting input voltage to output current or vice versa |
| 104 | DF | .~ Converting, per se, of an AC input to corresponding DC at an unloaded output |
| 105 | DF | .~ Synthesizer |
| 106 | DF | .~.~ Having stored waveform data (e.g., in ROM, etc.) |
| 107 | DF | .~.~ Having digital device (e.g., logic gate, flip-flop, etc.) |
| 108 | DF | .~ Current driver |
| 109 | DF | .~.~ Having semiconductive load |
| 110 | DF | .~.~ Having inductive load (e.g., coil, etc.) |
| 111 | DF | .~.~ Having capacitive load |
| 112 | DF | .~.~.~ Push-pull |
| 113 | DF | .~ Frequency or repetition rate conversion or control |
| 114 | DF | .~.~ Of output rectangular waveform |
| 115 | DF | .~.~.~ Frequency division |
| 116 | DF | .~.~.~ Frequency multiplication |
| 117 | DF | .~.~ Frequency division |
| 118 | DF | .~.~.~ Having discrete active device (e.g., transistor, triode, etc.) |
| 119 | DF | .~.~ Frequency multiplication (e.g., harmonic generation, etc.) |
| 120 | DF | .~.~.~ With plural outputs |
| 121 | DF | .~.~.~.~ Selective |
| 122 | DF | .~.~.~ Doubling |
| 123 | DF | .~.~.~ With particular tube or distributed parameter element |
| 124 | DF | .~ By periodic switching (e.g., chopper, etc.) |
| 125 | DF | .~ Generating parabolic or hyperbolic output |
| 126 | DF | .~ Generating staircase output |
| 127 | DF | .~.~ With differential amplifier |
| 128 | DF | .~.~ With rectifying element |
| 129 | DF | .~ Generating sinusoidal output |
| 130 | DF | .~ Generating trapezoidal output |
| 131 | DF | .~ Generating sawtooth or triangular output |
| 132 | DF | .~.~ With current source or current mirror |
| 133 | DF | .~.~ With distortion control (e.g., linearization, etc.) |
| 134 | DF | .~.~ With slope or duration control |
| 135 | DF | .~.~ Having digital element |
| 136 | DF | .~.~ Having particular delay or sync |
| 137 | DF | .~.~ Having feedback |
| 138 | DF | .~.~ Having temperature compensation |
| 139 | DF | .~.~ Having inductive load |
| 140 | DF | .~.~ With amplitude control |
| 141 | DF | .~ Synchronizing |
| 142 | DF | .~.~ Reset (e.g., initializing, starting, stopping, etc.) |
| 143 | DF | .~.~.~ Responsive to power supply |
| 144 | DF | .~.~ Using multiple clocks |
| 145 | DF | .~.~.~ Having different frequencies |
| 146 | DF | .~.~.~ With feedback |
| 147 | DF | .~.~.~.~ Phase lock loop |
| 148 | DF | .~.~.~.~.~ With charge pump |
| 149 | DF | .~.~.~.~.~ With variable delay means |
| 150 | DF | .~.~.~.~.~ With digital element |
| 151 | DF | .~.~.~ With counter |
| 152 | DF | .~.~.~ With choice between multiple delayed clocks |
| 153 | DF | .~.~.~ With delay means |
| 154 | DF | .~.~ With feedforward |
| 155 | DF | .~.~ With feedback |
| 156 | DF | .~.~.~ Phase lock loop |
| 157 | DF | .~.~.~.~ With charge pump |
| 158 | DF | .~.~.~.~ With variable delay means |
| 159 | DF | .~.~.~.~ With digital element |
| 160 | DF | .~.~ With counter |
| 161 | DF | .~.~ With delay means |
| 162 | DF | .~.~ Having reference source |
| 163 | DF | .~.~.~ By phase |
| 164 | DF | .~ Generating rectangular (e.g., clock, etc.) or pulse waveform having random characteristic (e.g., random width, etc.) |
| 165 | DF | .~ Regenerating or restoring rectangular (e.g., clock, etc.) or pulse waveform |
| 166 | DF | .~.~ Having digital device (e.g., logic gate, flip-flop, etc.) |
| 167 | DF | .~.~ Having network providing particular mathematical function (e.g., integrator, etc.) |
| 168 | DF | .~.~ Having inductive device (e.g., transformer, etc.) |
| 169 | DF | .~.~ Having negative resistance device (e.g., tunnel diode, etc.) |
| 170 | DF | .~ Slope control of leading or trailing edge of rectangular (e.g., clock, etc.) or pulse waveform |
| 171 | DF | .~ Output pulses having opposite polarities |
| 172 | DF | .~ Rectangular (e.g., clock, etc.) or pulse waveform width control |
| 173 | DF | .~.~ Pulse narrowing |
| 174 | DF | .~.~ Pulse broadening |
| 175 | DF | .~.~ Duty cycle control |
| 176 | DF | .~.~ Having digital device (e.g., logic gate, flip-flop, etc.) |
| 177 | DF | .~.~ Having inductive device (e.g., transformer, etc.) |
| 178 | DF | .~ Rectangular (e.g., clock, etc.) or pulse waveform amplitude control |
| 179 | DF | .~.~ Gain |
| 180 | DF | .~.~ Limiting, clipping, or clamping |
| 181 | DF | .~ Electromagnetic pulse forming |
| 182 | DF | .~ Delay line or capacitor storage element charged or discharged through or by a relaxation oscillator type circuit to form pulse |
| 183 | DF | .~ Delay line or capacitor storage element charges or discharges through a tube to form pulse |
| 184 | DF | .~ Rectangular (e.g., clock, etc.) or pulse waveform generating by conversion from input AC (e.g., sine, etc.) wave |
| 185 | DF | .~ Particular stable state circuit (e.g., tristable, etc.) |
| 186 | DF | .~.~ Superconductive (e.g., cryogenic, etc.) |
| 187 | DF | .~.~ External effect device (e.g., light, heat, magnetic, or mechanical force sensitive devices, etc.) |
| 188 | DF | .~.~ Minority carrier storage effect |
| 189 | DF | .~.~.~ Storage diode (e.g., step recovery, etc.) |
| 190 | DF | .~.~ With transformer or saturable core device |
| 191 | DF | .~.~.~ Blocking oscillator |
| 192 | DF | .~.~ Negative resistance transistor (e.g., unijunction, etc.) |
| 193 | DF | .~.~.~ Four or more layer device, (e.g., trigistor, etc.) |
| 194 | DF | .~.~ Zener or capacitive diode |
| 195 | DF | .~.~ Negative resistance diode having "N"-shape characteristic on I-V plot (e.g., tunnel diode, backward diode, etc.) |
| 196 | DF | .~.~ Negative resistance diode having "S"-shape characteristic on I-V plot (e.g., four or more layer semiconductor device, etc.) |
| 197 | DF | .~.~ Convertible circuit (e.g., bistable to monostable, D-type to T-type, etc.) |
| 198 | DF | .~.~ Initializing, resetting, or protecting a steady state condition |
| 199 | DF | .~.~ Circuit having only two stable states (i.e., bistable) |
| 200 | DF | .~.~.~ Dynamic bistable |
| 201 | DF | .~.~.~.~ Complementary clock inputs |
| 202 | DF | .~.~.~ Master-slave bistable latch |
| 203 | DF | .~.~.~.~ Including field-effect transistor |
| 204 | DF | .~.~.~.~ Including multi-emitter or multi-collector bipolar transistor |
| 205 | DF | .~.~.~ Using hysteresis (e.g., Schmitt trigger, etc.) |
| 206 | DF | .~.~.~.~ Including field-effect transistor |
| 207 | DF | .~.~.~ Including diverse solid state devices (e.g., FET/bipolar, etc.) |
| 208 | DF | .~.~.~ Including field-effect transistor |
| 209 | DF | .~.~.~.~ Including enhancement and depletion devices |
| 210 | DF | .~.~.~.~ CMOS |
| 211 | DF | .~.~.~.~.~ With clock input |
| 212 | DF | .~.~.~.~ With clock input |
| 213 | DF | .~.~.~.~.~ Plural independent clock inputs (i.e., non complementary ) |
| 214 | DF | .~.~.~ Complementary transistors |
| 215 | DF | .~.~.~ Having at least two cross-coupling paths |
| 216 | DF | .~.~.~.~ JK type input |
| 217 | DF | .~.~.~.~ RS or RST type input |
| 218 | DF | .~.~.~.~ D type input |
| 219 | DF | .~.~.~.~ Particular device at input, output, or in cross-coupling path |
| 220 | DF | .~.~.~.~.~ With diode |
| 221 | DF | .~.~.~.~.~ Parallel RC network in cross-coupling path |
| 222 | DF | .~.~.~.~.~ Resistor in cross-coupling path |
| 223 | DF | .~.~.~ Plural transistors of same conductivity type |
| 224 | DF | .~.~.~ With single semiconductor device |
| 225 | DF | .~.~.~ With logic element (e.g., NOR gate, etc.) |
| 226 | DF | .~.~.~ With single electron tube |
| 227 | DF | .~.~ Monostable |
| 228 | DF | .~.~.~ Having cross-coupled paths |
| 229 | DF | .~.~.~ Having differential circuitry |
| 230 | DF | .~.~.~ With external feedback (i.e., output to input) |
| 231 | DF | .~ Phase shift by less than period of input |
| 232 | DF | .~.~ Dependent on frequency |
| 233 | DF | .~.~ Correction to specific phase shift |
| 234 | DF | .~.~.~ Dependent on variable controlled phase shifts |
| 235 | DF | .~.~.~ Dependent on multiple fixed phase shifts |
| 236 | DF | .~.~.~ By phase comparator or detector |
| 237 | DF | .~.~ Variable or adjustable |
| 238 | DF | .~.~.~ Quadrature related (i.e., 90 degrees) |
| 239 | DF | .~.~.~ Non-overlapping multiple outputs |
| 240 | DF | .~.~.~ Maintaining invariant amplitude |
| 241 | DF | .~.~.~ With counter or shift register |
| 242 | DF | .~.~.~.~ Having multiple outputs |
| 243 | DF | .~.~.~ With feedback |
| 244 | DF | .~.~.~.~ With phase comparator or detector |
| 245 | DF | .~.~.~.~ Having multiple outputs |
| 246 | DF | .~.~.~ With differential amplifier |
| 247 | DF | .~.~.~.~ Having multiple outputs |
| 248 | DF | .~.~.~ With adder |
| 249 | DF | .~.~.~.~ Having multiple outputs |
| 250 | DF | .~.~.~ With active time delay element |
| 251 | DF | .~.~.~.~ Having multiple outputs |
| 252 | DF | .~.~.~ With passive time delay element |
| 253 | DF | .~.~.~.~ Having multiple outputs |
| 254 | DF | .~.~ Quadrature related (i.e., 90 degrees) |
| 255 | DF | .~.~.~ 90 degrees between input and output |
| 256 | DF | .~.~ Phase inversion (i.e., 180 degrees between input and output) |
| 257 | DF | .~.~.~ Multiple outputs |
| 258 | DF | .~.~ Multiple outputs |
| 259 | DF | .~.~.~ Non-overlapping |
| 260 | DF | .~.~ Producing AC power control |
| 261 | DF | .~ Having specific delay in producing output waveform |
| 262 | DF | .~.~ Including significant compensation (e.g., temperature compensated delay, etc.) |
| 263 | DF | .~.~ Delay interval set by rising or falling edge |
| 264 | DF | .~.~.~ Having specific active circuit element or structure (e.g., FET, complementary transistors, etc.) |
| 265 | DF | .~.~.~.~ With counter |
| 266 | DF | .~.~.~.~ Differential amplifier |
| 267 | DF | .~.~.~.~ Electron tube |
| 268 | DF | .~.~.~ Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
| 269 | DF | .~.~ Multiple outputs with plurality of delay intervals |
| 270 | DF | .~.~.~ Variable or adjustable |
| 271 | DF | .~.~.~ Including delay line or charge transfer device |
| 272 | DF | .~.~.~ Having specific active circuit element or structure(e.g., FET, complementary transistors, etc.) |
| 273 | DF | .~.~.~.~ With counter |
| 274 | DF | .~.~.~.~ Differential amplifier |
| 275 | DF | .~.~.~.~ Electron tube |
| 276 | DF | .~.~ Single output with variable or selectable delay |
| 277 | DF | .~.~.~ Including delay line or charge transfer device |
| 278 | DF | .~.~.~ Having specific active circuit element or structure (e.g., complementary transistors, etc.) |
| 279 | DF | .~.~.~.~ With counter |
| 280 | DF | .~.~.~.~ Differential amplifier |
| 281 | DF | .~.~.~.~ Field-effect transistor |
| 282 | DF | .~.~.~.~ Electron tube |
| 283 | DF | .~.~.~ Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
| 284 | DF | .~.~ Including delay line or charge transfer device |
| 285 | DF | .~.~ Having specific active circuit element or structure (e.g., complementary transistors, etc.) |
| 286 | DF | .~.~.~ With counter |
| 287 | DF | .~.~.~ Differential amplifier |
| 288 | DF | .~.~.~ Field-effect transistor |
| 289 | DF | .~.~.~ Electron tube |
| 290 | DF | .~.~ Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
| 291 | DF | .~ Clock or pulse waveform generating |
| 292 | DF | .~.~ Clock fault compensation or redundant clocks |
| 293 | DF | .~.~ With plural paths in network |
| 294 | DF | .~.~.~ With common output |
| 295 | DF | .~.~ Plural outputs |
| 296 | DF | .~.~.~ Plural clock outputs with multiple inputs |
| 297 | DF | .~.~.~ Clock bus |
| 298 | DF | .~.~ Single clock output with multiple inputs |
| 299 | DF | .~.~ Single clock output with single clock input or data input |
| 300 | DF | .~.~ With saturable inductance |
| 301 | DF | .~.~ With electron beam type tube |
| 302 | DF | .~.~ With storage diode |
| 303 | DF | .~.~ With rectifier |
| 304 | DF | .~.~ With inductive device (e.g., transformer, etc.) |
| 305 | DF | .~.~ With gas tube |
| 306 | DF | .~ Amplitude control |
| 307 | DF | .~.~ Baseline or DC offset correction |
| 308 | DF | .~.~ Variable attenuator |
| 309 | DF | .~.~ By limiting, clipping, or clamping |
| 310 | DF | .~.~.~ Transient or signal noise reduction |
| 311 | DF | .~.~.~.~ By filtering |
| 312 | DF | .~.~.~.~ By feedback limiting-clamping |
| 313 | DF | .~.~.~.~ Using 3 or more terminal type nonlinear devices only |
| 314 | DF | .~.~.~.~ Using diode type nonlinear devices only |
| 315 | DF | .~.~.~ Providing constant input/output amplitude level ratio |
| 316 | DF | .~.~.~.~ By feedback control |
| 317 | DF | .~.~.~ Distortion compensation |
| 318 | DF | .~.~.~ In input or output circuit |
| 319 | DF | .~.~.~.~ For interstage coupling |
| 320 | DF | .~.~.~.~.~ Using diode |
| 321 | DF | .~.~.~.~ Clamping of output to voltage level |
| 322 | DF | .~.~.~.~ Of output current |
| 323 | DF | .~.~.~ Feedback |
| 324 | DF | .~.~.~ By using diverse-type nonlinear devices |
| 325 | DF | .~.~.~ Using only diode active elements |
| 326 | DF | .~.~.~.~ Avalanche or negative resistance device (e.g., zener diode, tunnel diode, etc.) |
| 327 | DF | .~.~.~ Using only transistor active elements |
| 328 | DF | .~.~.~.~ Field-effect type device |
| 329 | DF | .~.~.~ With tuned circuit |
| 330 | DF | .~.~.~ With rectifier or nonlinear impedance |
| 331 | DF | .~.~ Maintaining constant level output |
| 332 | DF | .~.~.~ With feedback |
| 333 | DF | .~.~ Interstage coupling (e.g., level shift, etc.) |
| 334 | DF | SPECIFIC INPUT TO OUTPUT FUNCTION |
| 335 | DF | .~ By differentiating |
| 336 | DF | .~ By integrating |
| 337 | DF | .~.~ Having switched capacitance |
| 338 | DF | .~.~ With thermionic tube |
| 339 | DF | .~.~ With summing or counting |
| 340 | DF | .~.~ Single vacuum tube |
| 341 | DF | .~.~ With compensation |
| 342 | DF | .~.~ With transducer |
| 343 | DF | .~.~ With rectifier circuit |
| 344 | DF | .~.~ Including RC circuit |
| 345 | DF | .~.~ Having feedback |
| 346 | DF | .~ Exponential |
| 347 | DF | .~.~ Square root |
| 348 | DF | .~.~.~ RMS |
| 349 | DF | .~.~ Square function |
| 350 | DF | .~ Logarithmic |
| 351 | DF | .~.~ With cascade network |
| 352 | DF | .~.~ With summing |
| 353 | DF | .~.~ With vacuum tube |
| 354 | DF | .~ Absolute value |
| 355 | DF | .~ Combining of plural signals |
| 356 | DF | .~.~ Product |
| 357 | DF | .~.~.~ Quadrant |
| 358 | DF | .~.~.~ Having feedback |
| 359 | DF | .~.~.~ Differential amplifier |
| 360 | DF | .~.~ Quotient |
| 361 | DF | .~.~ Summing |
| 362 | DF | .~ With compensation |
| 363 | DF | .~ Having feedback |
| 364 | DF | .~ With vacuum tube |
| 365 | DF | GATING (I.E., SWITCHING INPUT TO OUTPUT) |
| 366 | DF | .~ Superconductive (e.g., cryogenic, etc.) device |
| 367 | DF | .~.~ Josephson junction |
| 368 | DF | .~.~ Critical current control |
| 369 | DF | .~.~ External control (e.g., piezoelectric, light, etc.) |
| 370 | DF | .~.~.~ Magnetic field control |
| 371 | DF | .~.~.~ Temperature control |
| 372 | DF | .~.~ Inductive effect |
| 373 | DF | .~.~ Layout |
| 374 | DF | .~ Accelerating switching |
| 375 | DF | .~.~ Saturation prevention |
| 376 | DF | .~.~ Turn-on |
| 377 | DF | .~.~ Turn-off |
| 378 | DF | .~ Compensation for variations in external physical values (e.g., temperature, etc.) |
| 379 | DF | .~ Signal transmission integrity or spurious noise override |
| 380 | DF | .~.~ Preventing quick rise gating current (i.e., di/dt) |
| 381 | DF | .~.~ Preventing quick rise gating voltage (i.e., dv/dt) |
| 382 | DF | .~.~ Parasitic prevention or compensation (e.g., parasitic capacitance, etc.) |
| 383 | DF | .~.~ Ensuring fully conducting state |
| 384 | DF | .~.~ Switch noise signal |
| 385 | DF | .~.~.~ Contact bounce from mechanical switch |
| 386 | DF | .~.~.~.~ With clock input |
| 387 | DF | .~.~ Control signal derived from or responsive to input signal |
| 388 | DF | .~.~.~ Additional external control signal |
| 389 | DF | .~.~ Insulated gate FET (e.g., MOSFET, etc.) |
| 390 | DF | .~.~.~ With capacitive bootstrapping |
| 391 | DF | .~.~.~ Complementary metal-oxide semiconductor (CMOS) |
| 392 | DF | .~ Delay controlled switch (e.g., fixed, single time of delay control, etc.) |
| 393 | DF | .~.~ With variable or multiple adjustable time of delay control (e.g., variable charge-discharge, on-delay/off-delay control, etc.) |
| 394 | DF | .~.~.~ With field-effect device |
| 395 | DF | .~.~.~ Propagation through plural delay devices or paths |
| 396 | DF | .~.~.~ With plural switching elements (e.g., sequential, etc.) |
| 397 | DF | .~.~.~ Including negative resistance device in delay circuit (e.g., unijunction transistor, etc.) |
| 398 | DF | .~.~ For predetermined time period |
| 399 | DF | .~.~ With field-effect device |
| 400 | DF | .~.~ Propagation through plural delay devices or paths |
| 401 | DF | .~.~ With plural switching elements (e.g., sequential, etc.) |
| 402 | DF | .~.~ Including negative resistance device in delay circuit (e.g., unijunction transistor, etc.) |
| 403 | DF | .~ Parallel controlled paths |
| 404 | DF | .~.~ Field-effect transistor |
| 405 | DF | .~.~ Bipolar transistor |
| 406 | DF | .~.~ Electron tube |
| 407 | DF | .~ Converging with plural inputs and single output |
| 408 | DF | .~.~ Field-effect transistor |
| 409 | DF | .~.~.~ Push-pull circuit |
| 410 | DF | .~.~.~.~ With complementary transistor devices |
| 411 | DF | .~.~ Bipolar transistor |
| 412 | DF | .~.~.~ Push-pull circuit |
| 413 | DF | .~.~.~.~ With complementary transistor devices |
| 414 | DF | .~.~ Electron tube |
| 415 | DF | .~ Diverging with single input and plural outputs |
| 416 | DF | .~.~ Field-effect transistor |
| 417 | DF | .~.~ Bipolar transistor |
| 418 | DF | .~.~ Electron tube |
| 419 | DF | .~ Utilizing three or more electrode solid-state device |
| 420 | DF | .~.~ Breakdown characteristic (e.g., punch-through, tunneling, etc.) |
| 421 | DF | .~.~.~ Zener |
| 422 | DF | .~.~.~ Avalanche |
| 423 | DF | .~.~ Bridge circuit |
| 424 | DF | .~.~.~ Field-effect transistor |
| 425 | DF | .~.~ Bilateral transistor |
| 426 | DF | .~.~.~ Plural |
| 427 | DF | .~.~ Field-effect transistor |
| 428 | DF | .~.~.~ With silicon controlled rectifier (SCR) |
| 429 | DF | .~.~.~ Four or more electrode solid-state device |
| 430 | DF | .~.~.~ JFET (i.e., junction field-effect transistor) |
| 431 | DF | .~.~.~.~ MESFET (i.e., metal semiconductor field-effect transistor) |
| 432 | DF | .~.~.~ With bipolar transistor |
| 433 | DF | .~.~.~.~ Bi-CMOS |
| 434 | DF | .~.~.~ Insulated gate FET (e.g., MOSFET, etc.) |
| 435 | DF | .~.~.~.~ GaAs |
| 436 | DF | .~.~.~.~ Plural devices in series |
| 437 | DF | .~.~.~.~ Complementary metal-oxide semiconductor (CMOS) |
| 438 | DF | .~.~ Four or more layer device (e.g., thyristor, etc.) |
| 439 | DF | .~.~.~ Bipolar transistor circuit configuring SCR device |
| 440 | DF | .~.~.~ GTO (i.e., gate turnoff) |
| 441 | DF | .~.~.~.~ Plural or combined with other four or more layer device |
| 442 | DF | .~.~.~.~ Separate ON and OFF control circuit |
| 443 | DF | .~.~.~.~ Transformer or inductor in control circuit |
| 444 | DF | .~.~.~ Complex wave supply |
| 445 | DF | .~.~.~.~ Silicon controlled rectifier (SCR) |
| 446 | DF | .~.~.~.~.~ Triac |
| 447 | DF | .~.~.~ AC supply |
| 448 | DF | .~.~.~.~ Device in bridge |
| 449 | DF | .~.~.~.~ PUT (i.e., programmable unijunction transistor) |
| 450 | DF | .~.~.~.~ Four electrodes |
| 451 | DF | .~.~.~.~ Zero point switching |
| 452 | DF | .~.~.~.~.~ With triac |
| 453 | DF | .~.~.~.~ Silicon controlled rectifier (SCR) |
| 454 | DF | .~.~.~.~.~ With unijunction transistor |
| 455 | DF | .~.~.~.~.~ Triac |
| 456 | DF | .~.~.~.~.~.~ Plural |
| 457 | DF | .~.~.~.~.~.~ Combined with diac |
| 458 | DF | .~.~.~.~.~.~ Combined with diverse four or more layer device |
| 459 | DF | .~.~.~.~.~.~ With bipolar transistor |
| 460 | DF | .~.~.~.~.~ Plural SCR's |
| 461 | DF | .~.~.~.~.~.~ Inverse parallel connection |
| 462 | DF | .~.~.~.~.~.~.~ With bipolar transistor |
| 463 | DF | .~.~.~.~.~ With bipolar transistor |
| 464 | DF | .~.~.~.~ Having plural four or more layer devices |
| 465 | DF | .~.~.~ DC supply |
| 466 | DF | .~.~.~.~ PUT (i.e., programmable unijunction transistor) |
| 467 | DF | .~.~.~.~ Four electrodes |
| 468 | DF | .~.~.~.~ SCR and unijunction transistor |
| 469 | DF | .~.~.~.~ Triac |
| 470 | DF | .~.~.~.~ Plural devices |
| 471 | DF | .~.~.~.~.~ Series anode-cathode connection |
| 472 | DF | .~.~.~.~.~.~ Plural paths |
| 473 | DF | .~.~.~.~.~ Parallel connection |
| 474 | DF | .~.~.~.~.~ With bipolar transistor |
| 475 | DF | .~.~.~.~ SCR and bipolar transistor |
| 476 | DF | .~.~.~ Triac |
| 477 | DF | .~.~ Unijunction transistor (UJT) |
| 478 | DF | .~.~ Bipolar transistor |
| 479 | DF | .~.~.~ Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) |
| 480 | DF | .~.~.~.~ Multiple emitter transistor |
| 481 | DF | .~.~.~.~ Multiple collector transistor |
| 482 | DF | .~.~.~ Plural |
| 483 | DF | .~.~.~.~ Darlington connection |
| 484 | DF | .~.~.~.~ Opposite conductively (i.e., complementary) |
| 485 | DF | .~.~.~.~.~ Control circuit in cascade |
| 486 | DF | .~.~.~.~.~ Control circuit in totem pole |
| 487 | DF | .~.~.~.~ Control circuit in cascade |
| 488 | DF | .~.~.~.~ Control circuit in totem pole |
| 489 | DF | .~.~.~.~ Control circuit with common emitter |
| 490 | DF | .~.~.~.~.~ With current mirror |
| 491 | DF | .~.~.~.~.~ With emitter follower |
| 492 | DF | .~.~.~.~ Control circuit with common collector |
| 493 | DF | .~ Utilizing two electrode solid-state device |
| 494 | DF | .~.~ Bridge circuit |
| 495 | DF | .~.~.~ Combined with diverse device in at least one arm |
| 496 | DF | .~.~.~ Plural |
| 497 | DF | .~.~.~ Active element in diagonal arm |
| 498 | DF | .~.~ Negative resistance |
| 499 | DF | .~.~.~ "N"-shape curve on I-V plot (e.g., tunnel diode type, etc.) |
| 500 | DF | .~.~.~ "S"-shape curve on I-V plot (e.g., pnpn diode type, etc.) |
| 501 | DF | .~.~.~.~ Hyperconductive diode |
| 502 | DF | .~.~ Breakdown characteristic (e.g., zener diode, etc.) |
| 503 | DF | .~.~ PIN diode |
| 504 | DF | .~.~ PN junction diode |
| 505 | DF | .~.~.~ Inverse parallel connection |
| 506 | DF | .~ Three or more electrode electron tube |
| 507 | DF | .~ Two electrode electron tube |
| 508 | DF | .~.~ Bridge circuit |
| 509 | DF | EXTERNAL EFFECT |
| 510 | DF | .~ Magnetic |
| 511 | DF | .~.~ Utilizing Hall effect |
| 512 | DF | .~ Temperature |
| 513 | DF | .~.~ With compensation for temperature fluctuations |
| 514 | DF | .~ Light |
| 515 | DF | .~.~ Elements forming an array |
| 516 | DF | .~ Utilizing conversion of mechanical variations into electrical variations (e.g., vibration sensitive, etc.) |
| 517 | DF | .~ Responsive to proximity or touch |
| 518 | DF | WITH PARTICULAR CONTROL |
| 519 | DF | .~ Plurality of load devices |
| 520 | DF | .~ Plural active components included in a controlling circuit |
| 521 | DF | .~.~ Connected in inverse parallel |
| 522 | DF | .~.~ Gaseous tube |
| 523 | DF | .~ Gaseous tube |
| 524 | DF | SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM |
| 525 | DF | .~ Fusible link or intentional destruct circuit |
| 526 | DF | .~ Redundant |
| 527 | DF | .~ Superconductive (e.g., cryogenic, etc.) device |
| 528 | DF | .~.~ Josephson junction |
| 529 | DF | .~.~ Impact ionization |
| 530 | DF | .~ With specific source of supply or bias voltage |
| 531 | DF | .~.~ Fluctuating or AC source with rectifier or filter |
| 532 | DF | .~.~.~ With particular filter circuit |
| 533 | DF | .~.~.~ With battery connected across rectifier |
| 534 | DF | .~.~ Having particular substrate biasing |
| 535 | DF | .~.~.~ Having stabilized bias or power supply level |
| 536 | DF | .~.~.~.~ Charge pump details |
| 537 | DF | .~.~.~.~ With field-effect transistor |
| 538 | DF | .~.~ Stabilized (e.g., compensated, regulated, maintained, etc.) |
| 539 | DF | .~.~.~ Using bandgap |
| 540 | DF | .~.~.~ With voltage source regulating |
| 541 | DF | .~.~.~.~ With field-effect transistor |
| 542 | DF | .~.~.~ With diverse type transistor devices |
| 543 | DF | .~.~.~ Using field-effect transistor |
| 544 | DF | .~.~ Power conservation or pulse type |
| 545 | DF | .~.~ Including signal protection or bias preservation |
| 546 | DF | .~.~.~ With field-effect transistor |
| 547 | DF | .~.~ With selectively or alternately DC or AC input |
| 548 | DF | .~.~ With oscillator or interrupter |
| 549 | DF | .~.~ With hum or interaction prevention |
| 550 | DF | .~.~ With particular filament heating circuit |
| 551 | DF | .~ Unwanted signal suppression |
| 552 | DF | .~.~ Active filter |
| 553 | DF | .~.~.~ Adjustable |
| 554 | DF | .~.~.~.~ Switched capacitor filter |
| 555 | DF | .~.~.~.~ Selective type signal filtering (e.g., from low pass to high pass, etc.) |
| 556 | DF | .~.~.~ Notch or bandreject |
| 557 | DF | .~.~.~ Bandpass |
| 558 | DF | .~.~.~ Lowpass |
| 559 | DF | .~.~.~ Highpass |
| 560 | DF | .~ Nonlinear amplifying circuit |
| 561 | DF | .~.~ With operational amplifier |
| 562 | DF | .~.~.~ With field-effect transistor |
| 563 | DF | .~.~ With differential amplifier |
| 564 | DF | .~ Integrated structure |
| 565 | DF | .~.~ With specific layout or layout interconnections |
| 566 | DF | .~.~.~ Having field-effect transistor device |
| 567 | DF | .~ Thin film |
| 568 | DF | .~ Negative resistance type |
| 569 | DF | .~.~ Unijunction transistor |
| 570 | DF | .~.~ Having "N"-shape curve on I-V plot (e.g., tunnel diode type, etc.) |
| 571 | DF | .~.~ Having "S"-shape curve on I-V plot (e.g., pnpn diode type, etc.) |
| 572 | DF | .~.~ Secondary emissive type |
| 573 | DF | .~.~.~ Electron multiplier type |
| 574 | DF | .~ Utilizing a three or more electrode solid-state device |
| 575 | DF | .~.~ Darlington connection |
| 576 | DF | .~.~ Complementary transistors |
| 577 | DF | .~.~ Multiple emitter transistor |
| 578 | DF | .~.~ Multiple collector transistor |
| 579 | DF | .~.~ Minority carrier storage |
| 580 | DF | .~.~ Transistor breakdown device (e.g., avalanche, zener, punch through, etc.) |
| 581 | DF | .~.~ Field-effect transistor |
| 582 | DF | .~.~ Four or more layer device (e.g., silicon-controlled rectifier, etc.) |
| 583 | DF | .~ Utilizing two electrode solid-state device |
| 584 | DF | .~.~ Breakdown diode (e.g., zener diode, avalanche diode, etc.) |
| 585 | DF | .~.~ Minority carrier storage diode (e.g., enhancement diode, etc.) |
| 586 | DF | .~.~ Capacitive diode |
| 587 | DF | .~.~ Bridge circuit |
| 588 | DF | .~ With bridge circuit |
| 589 | DF | .~ With bootstrap circuit |
| 590 | DF | .~ With particular feedback |
| 591 | DF | .~ Tube performs plural functions |
| 592 | DF | .~ With oscillation prevention |
| 593 | DF | .~ With distributed parameter circuit |
| 594 | DF | .~ With particular coupling or decoupling |
| 595 | DF | .~ With particular connecting |
| 596 | DF | .~ Including oscillatory or shock-excited circuit |
| 597 | DF | .~ With particular grid control |
| 598 | DF | .~ With particular tube structure |
| 599 | DF | .~.~ Vacuum tube type |
| 600 | DF | .~.~.~ Beam tube structure |
| 601 | DF | .~.~ Gas tube |
| 602 | DF | .~.~.~ With particular electrode arrangement |
| 603 | DF | MISCELLANEOUS |