US PATENT SUBCLASS 327 / 434
.~.~.~ Insulated gate FET (e.g., MOSFET, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
434.~.~.~ Insulated gate FET (e.g., MOSFET, etc.) {3}
435  DF  .~.~.~.~> GaAs
436  DF  .~.~.~.~> Plural devices in series
437  DF  .~.~.~.~> Complementary metal-oxide semiconductor (CMOS)

DEFINITION

Classification: 327/434

Insulated gate FET (e.g., MOSFET, etc.):

(under subclass 427) Subject matter including a unipolar transistor characterized by having a lightly doped substrate (e.g., p-type material) into which two highly doped regions (e.g., n+ type material) are diffused for forming source/drain regions with the area therebetween becoming the channel for current carriers (i.e., holes or electrons) when an electrical field is applied and a layer of insulating material (e.g., SiO2) is grown over the channel surface for separating the channel from a control (i.e., gate) electrode.

(1) Note. In a unipolar transistor, the source to drain current involves only one type of charge carrier.

(2) Note. A MOSFET or Metal-oxide field-effect transistor has a metallic gate insulated by an oxide layer from the semiconductor channel.