US PATENT SUBCLASS 327 / 437
.~.~.~.~ Complementary metal-oxide semiconductor (CMOS)


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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
434  DF  .~.~.~ Insulated gate FET (e.g., MOSFET, etc.) {3}
437.~.~.~.~ Complementary metal-oxide semiconductor (CMOS)


DEFINITION

Classification: 327/437

Complementary metal-oxide semiconductor (CMOS):

(under subclass 434) Subject matter wherein the switching device includes a unit of two enhancement mode metal-oxide field-effect transistors, each having a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel) and they are connected in series across the power supply with gates linked together.

(1) Note. In the enhancement mode, a MOSFET is normally off with zero gate voltage applied.

(2) Note. Opposite channel conductivity type, as used above, characterizes the induced channel majority carrier conduction (i.e., holes for p-channel and electrons for n-channel).