US PATENT SUBCLASS 327 / 419
.~ Utilizing three or more electrode solid-state device

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419.~ Utilizing three or more electrode solid-state device {7}
420  DF  .~.~> Breakdown characteristic (e.g., punch-through, tunneling, etc.) {2}
423  DF  .~.~> Bridge circuit {1}
425  DF  .~.~> Bilateral transistor {1}
427  DF  .~.~> Field-effect transistor {5}
438  DF  .~.~> Four or more layer device (e.g., thyristor, etc.) {6}
477  DF  .~.~> Unijunction transistor (UJT)
478  DF  .~.~> Bipolar transistor {2}

DEFINITION

Classification: 327/419

Utilizing three or more electrode solid-state device:

(under subclass 365) Subject matter including a semiconductor

device containing three or more elements that perform one or more of the following: (a) emit or collect electrons or holes, or (b) control the electron or hole movements by an applied electrical field.