US PATENT SUBCLASS 327 / 438
.~.~ Four or more layer device (e.g., thyristor, etc.)


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
438.~.~ Four or more layer device (e.g., thyristor, etc.) {6}
439  DF  .~.~.~> Bipolar transistor circuit configuring SCR device
440  DF  .~.~.~> GTO (i.e., gate turnoff) {3}
444  DF  .~.~.~> Complex wave supply {1}
447  DF  .~.~.~> AC supply {6}
465  DF  .~.~.~> DC supply {6}
476  DF  .~.~.~> Triac


DEFINITION

Classification: 327/438

Four or more layer device (e.g., thyristor, etc.):

(under subclass 419) Subject matter including a semiconductor device with four or more alternating layers of p-type and n-type material, (e.g., pnpn, etc.)

(1) Note. A typical four layer device is a thyristor which is a device comprising three or more junctions, at least one of the junctions can switch between reverse- and forward-voltage polarity within a single quadrant of the anode-to-cathode voltage-current characteristics.