US PATENT SUBCLASS 327 / 438-- .~.~ Four or more layer device (e.g., thyristor, etc.)

US PATENT SUBCLASS 327 / 438
.~.~ Four or more layer device (e.g., thyristor, etc.)

Current as of: June, 1999
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327 /	HD	MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365	DF	GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419	DF	.~ Utilizing three or more electrode solid-state device {7}
438		.~.~ Four or more layer device (e.g., thyristor, etc.) {6}
439	DF	.~.~.~> Bipolar transistor circuit configuring SCR device
440	DF	.~.~.~> GTO (i.e., gate turnoff) {3}
444	DF	.~.~.~> Complex wave supply {1}
447	DF	.~.~.~> AC supply {6}
465	DF	.~.~.~> DC supply {6}
476	DF	.~.~.~> Triac

DEFINITION

Classification: 327/438

Four or more layer device (e.g., thyristor, etc.):

(under subclass 419) Subject matter including a semiconductor device with four or more alternating layers of p-type and n-type material, (e.g., pnpn, etc.)

(1) Note. A typical four layer device is a thyristor which is a device comprising three or more junctions, at least one of the junctions can switch between reverse- and forward-voltage polarity within a single quadrant of the anode-to-cathode voltage-current characteristics.