US PATENT SUBCLASS 327 / 439
.~.~.~ Bipolar transistor circuit configuring SCR device

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
438  DF  .~.~ Four or more layer device (e.g., thyristor, etc.) {6}
439.~.~.~ Bipolar transistor circuit configuring SCR device

DEFINITION

Classification: 327/439

Bipolar transistor circuit configuring SCR device:

(under subclass 438) Subject matter wherein a circuit built with bipolar transistors performs the same function as a silicon controlled rectifier.