US PATENT SUBCLASS 327 / 478
.~.~ Bipolar transistor

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
478.~.~ Bipolar transistor {2}
479  DF  .~.~.~> Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) {2}
482  DF  .~.~.~> Plural {6}

DEFINITION

Classification: 327/478

Bipolar transistor:

(under subclass 419) Subject matter including a semiconductor device of the type having at least two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).

(1) Note. Npn and pnp type transistors are conventional bipolar transistors which have three regions, three electrodes, and two junctions. Each of the three regions is connected externally by a terminal labeled emitter, base, or collector.