US PATENT SUBCLASS 327 / 479
.~.~.~ Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
478  DF  .~.~ Bipolar transistor {2}
479.~.~.~ Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) {2}
480  DF  .~.~.~.~> Multiple emitter transistor
481  DF  .~.~.~.~> Multiple collector transistor

DEFINITION

Classification: 327/479

Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.):

(under subclass 478) Subject matter wherein the bipolar transistor has more than three electrodes or has particular features, such as an additional FET gate.