US PATENT SUBCLASS 327 / 435
.~.~.~.~ GaAs


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
434  DF  .~.~.~ Insulated gate FET (e.g., MOSFET, etc.) {3}
435.~.~.~.~ GaAs


DEFINITION

Classification: 327/435

GaAs:

(under subclass 434) Subject matter wherein the semiconductor material is gallium arsenide.