US PATENT SUBCLASS 327 / 475
.~.~.~.~ SCR and bipolar transistor

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
438  DF  .~.~ Four or more layer device (e.g., thyristor, etc.) {6}
465  DF  .~.~.~ DC supply {6}
475.~.~.~.~ SCR and bipolar transistor

DEFINITION

Classification: 327/475

SCR and bipolar transistor:

(under subclass 465) Subject matter wherein the switching circuit includes a silicon controlled rectifier and a transistor of the type having at least two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).