US PATENT SUBCLASS 327 / 445
.~.~.~.~ Silicon controlled rectifier (SCR)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
438  DF  .~.~ Four or more layer device (e.g., thyristor, etc.) {6}
444  DF  .~.~.~ Complex wave supply {1}
445.~.~.~.~ Silicon controlled rectifier (SCR) {1}
446  DF  .~.~.~.~.~> Triac

DEFINITION

Classification: 327/445

Silicon controlled rectifier (SCR):

(under subclass 444) Subject matter including a four layer, three junction device, which can be triggered into conduction in only one direction.

(1) Note. The formal name of an SCR is a "reverse-blocking triode thyristor".

(2) Note. The three SCR terminals are called anode, cathode, and gate.