US PATENT SUBCLASS 327 / 430
.~.~.~ JFET (i.e., junction field-effect transistor)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
430.~.~.~ JFET (i.e., junction field-effect transistor) {1}
431  DF  .~.~.~.~> MESFET (i.e., metal semiconductor field-effect transistor)

DEFINITION

Classification: 327/430

JFET (i.e., junction field-effect transistor):

(under subclass 427) Subject matter including a field-effect transistor characterized by having heavily doped impurity regions of one type material (e.g., p-type), known as gate regions on both sides of a second type material semiconductor bar (e.g., n+ type) to form a pn junction.