US PATENT SUBCLASS 327 / 431
.~.~.~.~ MESFET (i.e., metal semiconductor field-effect transistor)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
430  DF  .~.~.~ JFET (i.e., junction field-effect transistor) {1}
431.~.~.~.~ MESFET (i.e., metal semiconductor field-effect transistor)

DEFINITION

Classification: 327/431

MESFET (i.e., metal semiconductor field-effect transistor):

(under subclass 430) Subject matter wherein the junction field-effect transistor operates on the principle of the injection of very highly concentrated majority carriers across a potential difference barrier which is formed by the junction of a lightly doped semiconductor substrate and a metal layer deposited thereon (i.e., Schottky gate junction).

(1) Note. A MESFET can utilize a semiconductor device type silicon or gallium arsenide material; however, GaAs is most frequently used.