US PATENT SUBCLASS 327 / 433
.~.~.~.~ Bi-CMOS

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
432  DF  .~.~.~ With bipolar transistor {1}
433.~.~.~.~ Bi-CMOS

DEFINITION

Classification: 327/433

Bi-CMOS:

(under subclass 432) Subject matter including a bipolar transistor and a unit of two enhancement mode metal-oxide field-effect transistors connected in series with their gates linked together, each field-effect transistor has a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel).