US PATENT SUBCLASS 327 / 502
.~.~ Breakdown characteristic (e.g., zener diode, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
493  DF  .~ Utilizing two electrode solid-state device {5}
502.~.~ Breakdown characteristic (e.g., zener diode, etc.)

DEFINITION

Classification: 327/502

Breakdown characteristic (e.g., zener diode, etc.):

(under subclass 493) Subject matter wherein the operation of the solid-state device is characterized by a sudden change from high dynamic electrical resistance to a very low dynamic resistance in a reverse biased semiconductor device (e.g., a reverse biased junction between p-type and n-type

semiconductor materials, wherein reverse current increases rapidly for a small increase in reverse applied voltage, and the device behaves as if it had negative electrical resistance).

(1) Note. An example of the breakdown characteristic is zener breakdown which is caused by the field emission of charge carriers in the depletion layer of the semiconductor device. When breakdown occurs, the electric field intensity in the material has become so great that electrons are effectively "ripped" from the valency bonding system.

SEE OR SEARCH THIS CLASS, SUBCLASS:

580, for miscellaneous circuits utilizing a breakdown transistor device.

584, for miscellaneous circuits utilizing a breakdown diode.