US PATENT SUBCLASS 327 / 417
.~.~ Bipolar transistor


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
415  DF  .~ Diverging with single input and plural outputs {3}
417.~.~ Bipolar transistor


DEFINITION

Classification: 327/417

Bipolar transistor:

(under subclass 415) Subject matter wherein at least one path includes a three or more electrode semiconductor device of the type having at least two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).

(1) Note. Npn and pnp type transistors are conventional bipolar transistors which have three regions, three electrodes and two junctions. Each of the three regions is connected externally by a terminal labeled emitter, base, or collector.