US PATENT SUBCLASS 327 / 583
.~ Utilizing two electrode solid-state device


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

524  DF  SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM {22}
583.~ Utilizing two electrode solid-state device {4}
584  DF  .~.~> Breakdown diode (e.g., zener diode, avalanche diode, etc.)
585  DF  .~.~> Minority carrier storage diode (e.g., enhancement diode, etc.)
586  DF  .~.~> Capacitive diode
587  DF  .~.~> Bridge circuit


DEFINITION

Classification: 327/583

Utilizing two electrode solid-state device:

(under subclass 524) Subject matter including a semiconductor device containing two structures that emit or collect electrons or holes, or that control their movements by an

applied electrical field.