US PATENT SUBCLASS 327 / 389
.~.~ Insulated gate FET (e.g., MOSFET, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
379  DF  .~ Signal transmission integrity or spurious noise override {7}
389.~.~ Insulated gate FET (e.g., MOSFET, etc.) {2}
390  DF  .~.~.~> With capacitive bootstrapping
391  DF  .~.~.~> Complementary metal-oxide semiconductor (CMOS)

DEFINITION

Classification: 327/389

Insulated gate FET (e.g., MOSFET, etc.):

(under subclass 379) Subject matter wherein the circuit includes one or more unipolar transistors characterized by having a lightly doped substrate (e.g., p-type material) into which two highly doped regions (e.g., n+ type material) are diffused for forming source/drain regions with the area therebetween becoming the channel for current carriers (i.e., holes or electrons) when an electrical field is applied; a layer of insulating material (e.g., SiO2) is grown over the channel surface for separating the channel from a control (i.e., gate) electrode.

(1) Note. In a unipolar transistor, the source to drain current involves only one type of charge carrier.

(2) Note. A MOSFET or Metal-oxide field-effect transistor has a metallic gate insulated by an oxide layer from the semiconductor channel.