US PATENT SUBCLASS 327 / 391
.~.~.~ Complementary metal-oxide semiconductor (CMOS)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
379  DF  .~ Signal transmission integrity or spurious noise override {7}
389  DF  .~.~ Insulated gate FET (e.g., MOSFET, etc.) {2}
391.~.~.~ Complementary metal-oxide semiconductor (CMOS)

DEFINITION

Classification: 327/391

Complementary metal-oxide semiconductor (CMOS):

(under subclass 389) Subject matter including a unit of two enhancement mode metal-oxide field-effect transistors, each having a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel) and they are connected in series across the power supply with gates linked together.

(1) Note. In the enhancement mode, a MOSFET is normally off with zero gate voltage applied.

(2) Note. Opposite channel conductivity type, as used above, characterizes the induced channel majority carrier conduction (i.e., holes for p-channel and electrons for n-channel).