US PATENT SUBCLASS 327 / 405
.~.~ Bipolar transistor


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
403  DF  .~ Parallel controlled paths {3}
405.~.~ Bipolar transistor


DEFINITION

Classification: 327/405

Bipolar transistor:

(under subclass 403) Subject matter wherein at least one path includes a three or more electrode semiconductor device of the type having at least two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).

(1) Note. Npn and pnp type transistors are conventional bipolar transistors; each has three regions, three electrodes and two junctions. Each of the three regions is connected externally by a terminal labeled emitter, base, or collector.