US PATENT SUBCLASS 327 / 582
.~.~ Four or more layer device (e.g., silicon-controlled rectifier, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

524  DF  SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM {22}
574  DF  .~ Utilizing a three or more electrode solid-state device {8}
582.~.~ Four or more layer device (e.g., silicon-controlled rectifier, etc.)

DEFINITION

Classification: 327/582

Four or more layer device (e.g., silicon-controlled rectifier, etc.):

(under subclass 574) Subject matter including a semiconductor device with four or more alternating layers having different conductivities, for example a pnpn device.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes), appropriate subclasses for a semiconductor structure, per se.